BCP56T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2005

Terminal Form :

Gull wing

Package / Case :

TO-261-4, TO-261AA

Transition Frequency :

130MHz

Collector Base Voltage (VCBO) :

100V

Transistor Element Material :

SILICON

Length :

6.5mm

Number of Terminations :

4

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

1.5W

Surface Mount :

yes

Collector Emitter Saturation Voltage :

500mV

Number of Pins :

4

Pin Count :

4

ECCN Code :

EAR99

Element Configuration :

Single

REACH SVHC :

No SVHC

Polarity/Channel Type :

NPN

Max Collector Current :

1A

Voltage - Rated DC :

80V

Current Rating :

1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Terminal Position :

Dual

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

80V

Gain Bandwidth Product :

130MHz

Max Breakdown Voltage :

80V

Lead Free :

Lead Free

Contact Plating :

Tin

Max Power Dissipation :

1.5W

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100nA ICBO

Frequency :

130MHz

Radiation Hardening :

No

Width :

3.5mm

Base Part Number :

BCP56

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

80V

Operating Temperature :

-65°C~150°C TJ

Case Connection :

COLLECTOR

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Height :

1.75mm

hFE Min :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pbfree Code :

yes