BCP5616TC
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- Mfr.Part #
- BCP5616TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 447
- In Stock ：
- 447
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 1A
- Pbfree Code :
- yes
- Published :
- 2005
- Additional Feature :
- High Reliability
- Number of Pins :
- 4
- Base Part Number :
- BCP56
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 150MHz
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Current Rating :
- 1A
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 80V
- Weight :
- 7.994566mg
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 14 Weeks
- Gain Bandwidth Product :
- 125MHz
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Datasheets
- BCP5616TC
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616TC Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP5616TC Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TC Applications
There are a lot of Diodes Incorporated
BCP5616TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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