BCP5616TA
- Mfr.Part #
- BCP5616TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 460
- In Stock :
- 460
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 125MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Continuous Collector Current :
- 1A
- Max Collector Current :
- 1A
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 80V
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Pin Count :
- 4
- Base Part Number :
- BCP56
- Length :
- 6.55mm
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.65mm
- Factory Lead Time :
- 14 Weeks
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Transition Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 80V
- Weight :
- 7.994566mg
- Power Dissipation :
- 2W
- Width :
- 3.55mm
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 1A
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Datasheets
- BCP5616TA

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCP5616TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCP5616TA Applications
There are a lot of Diodes Incorporated
BCP5616TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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