BCP5616QTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

NPN

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Max Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Max Collector Current :

1A

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Number of Terminations :

4

Transistor Type :

NPN

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Number of Elements :

1

Additional Feature :

High Reliability

Max Breakdown Voltage :

80V

JESD-30 Code :

R-PDSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

2W

Published :

2015

Transition Frequency :

150MHz

Collector Emitter Voltage (VCEO) :

500mV

Frequency - Transition :

150MHz

JESD-609 Code :

e3

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Pbfree Code :

yes

ECCN Code :

EAR99