BCP5610TA
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- Mfr.Part #
- BCP5610TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 88,938
- In Stock ：
- 88,938
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 3.55mm
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 500mV
- Package / Case :
- TO-261-4, TO-261AA
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 2W
- Transistor Type :
- NPN
- Length :
- 6.55mm
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- BCP56
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transition Frequency :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 80V
- Published :
- 2011
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 125MHz
- Height :
- 1.65mm
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 4
- Number of Terminations :
- 4
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Datasheets
- BCP5610TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5610TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP5610TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5610TA Applications
There are a lot of Diodes Incorporated
BCP5610TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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