BCP56-16T3G
- Mfr.Part #
- BCP56-16T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 22,927
- In Stock :
- 22,927
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Pin Count :
- 4
- Width :
- 3.5mm
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- hFE Min :
- 25
- Polarity/Channel Type :
- NPN
- Frequency :
- 130MHz
- Transistor Type :
- NPN
- Published :
- 2005
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1.5W
- Number of Pins :
- 4
- Number of Terminations :
- 4
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1.5W
- Max Breakdown Voltage :
- 80V
- Height :
- 1.63mm
- Max Collector Current :
- 1A
- Current Rating :
- 1A
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 130MHz
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- BCP56
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 80V
- Length :
- 6.5mm
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BCP56-16T3G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-16T3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 130MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCP56-16T3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
BCP56-16T3G Applications
There are a lot of ON Semiconductor
BCP56-16T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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