BCP56-16T1G
- Mfr.Part #
- BCP56-16T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 2,201
- In Stock :
- 2,201
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Frequency :
- 130MHz
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Package / Case :
- TO-261-4, TO-261AA
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 4
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1A
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 4
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 80V
- Packaging :
- Cut Tape (CT)
- Height :
- 1.57mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Width :
- 3.5mm
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 1.5W
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Surface Mount :
- yes
- Voltage - Rated DC :
- 80V
- Max Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Length :
- 6.5mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Base Part Number :
- BCP56
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 130MHz
- Gain Bandwidth Product :
- 130MHz
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- hFE Min :
- 25
- Published :
- 2005
- Pin Count :
- 4
- Datasheets
- BCP56-16T1G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BCP56-16T1G Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 1A volts is possible.
BCP56-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 130MHz
BCP56-16T1G Applications
There are a lot of ON Semiconductor
BCP56-16T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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