BCP56-10T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

1A

Transition Frequency :

130MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Power - Max :

1.5W

JESD-609 Code :

e3

Configuration :

Single

Package / Case :

TO-261-4, TO-261AA

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Max Power Dissipation :

1.5W

Lead Free :

Lead Free

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Frequency - Transition :

130MHz

Terminal Form :

Gull wing

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

80V

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

500mV

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Terminations :

4