BCP56-10T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Number of Pins :

4

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

80V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Height :

1.65mm

JESD-609 Code :

e3

Max Power Dissipation :

1.5W

Pin Count :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Max Collector Current :

1A

Terminal Position :

Dual

Base Part Number :

BCP56

Collector Emitter Voltage (VCEO) :

80V

Pbfree Code :

yes

Gain Bandwidth Product :

130MHz

Case Connection :

COLLECTOR

Number of Elements :

1

Width :

3.7mm

Contact Plating :

Tin

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

5V

Frequency :

130MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

4

Length :

6.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Transition Frequency :

130MHz

Collector Base Voltage (VCBO) :

100V

Published :

2005

Collector Emitter Saturation Voltage :

500mV

Transistor Type :

NPN

Current Rating :

1A

Polarity/Channel Type :

NPN

Factory Lead Time :

8 Weeks

Power Dissipation :

1.5W

hFE Min :

25

Package / Case :

TO-261-4, TO-261AA

Operating Temperature :

-65°C~150°C TJ

Max Breakdown Voltage :

80V

Transistor Element Material :

SILICON

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

80V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Mounting Type :

Surface Mount