BCP56-10,115
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- Mfr.Part #
- BCP56-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 347,634
- In Stock ：
- 347,634
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Gain Bandwidth Product :
- 180MHz
- Length :
- 6.7mm
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Height :
- 1.7mm
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 80V
- REACH SVHC :
- No SVHC
- Width :
- 3.7mm
- Mount :
- Surface Mount
- Number of Terminations :
- 4
- Transition Frequency :
- 180MHz
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 500mV
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 960mW
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Frequency :
- 180MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2007
- Max Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Base Part Number :
- BCP56
- Max Power Dissipation :
- 960mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 4.535924g
- Datasheets
- BCP56-10,115
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-10,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP56-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP56-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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