BCP55TA
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- Mfr.Part #
- BCP55TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223-3
- Stock
- 10,317
- In Stock ：
- 10,317
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 60V
- Pbfree Code :
- yes
- Weight :
- 7.994566mg
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Length :
- 6.55mm
- Current Rating :
- 1.5A
- Gain Bandwidth Product :
- 150MHz
- hFE Min :
- 40
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- High Reliability
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Published :
- 2011
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BCP55
- Contact Plating :
- Tin
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Lead Free :
- Lead Free
- Number of Terminations :
- 4
- Transition Frequency :
- 150MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 3.55mm
- Max Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- Height :
- 1.65mm
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2W
- Max Collector Current :
- 1A
- Datasheets
- BCP55TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BCP55TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 150MHz
BCP55TA Applications
There are a lot of Diodes Incorporated
BCP55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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