BCP55H6327XTSA1
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- Mfr.Part #
- BCP55H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223-4
- Stock
- 100
- In Stock ：
- 100
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Published :
- 2011
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 2W
- Factory Lead Time :
- 4 Weeks
- Height :
- 1.6mm
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 4
- ECCN Code :
- EAR99
- Length :
- 6.5mm
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Terminations :
- 4
- Width :
- 3.5mm
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Configuration :
- Single
- Base Part Number :
- BCP55
- Max Collector Current :
- 1A
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 500mV
- Datasheets
- BCP55H6327XTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55H6327XTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 1A volts.
BCP55H6327XTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BCP55H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCP55H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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