BCP55,135
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- Mfr.Part #
- BCP55,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT223
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Frequency :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 180MHz
- Terminal Position :
- Dual
- Transition Frequency :
- 130MHz
- Power Dissipation :
- 1.35W
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.35W
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BCP55
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- JESD-30 Code :
- R-PDSO-G4
- Case Connection :
- COLLECTOR
- Number of Pins :
- 73
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BCP55,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP55,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 1A volts can be achieved.
BCP55,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
BCP55,135 Applications
There are a lot of Nexperia USA Inc.
BCP55,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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