BCP5410TA
- Mfr.Part #
- BCP5410TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT223-3
- Stock
- 4,117
- In Stock :
- 4,117
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 7.994566mg
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1A
- Width :
- 3.55mm
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Terminations :
- 4
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 150MHz
- Height :
- 1.65mm
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2011
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Pin Count :
- 4
- Length :
- 6.55mm
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Power Dissipation :
- 2W
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BCP54
- Element Configuration :
- Single
- Frequency :
- 150MHz
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BCP5410TA

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5410TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCP5410TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5410TA Applications
There are a lot of Diodes Incorporated
BCP5410TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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