BCP53-16T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

3.7084mm

Element Configuration :

Single

Gain Bandwidth Product :

50MHz

Collector Emitter Voltage (VCEO) :

80V

Transition Frequency :

50MHz

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

100V

Collector Emitter Saturation Voltage :

-500mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Frequency :

50MHz

Number of Elements :

1

Published :

2008

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Type :

PNP

Factory Lead Time :

8 Weeks

Number of Terminations :

4

Operating Temperature :

-65°C~150°C TJ

Lead Free :

Lead Free

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Length :

6.6802mm

hFE Min :

25

Number of Pins :

4

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Max Breakdown Voltage :

80V

Max Collector Current :

1.5A

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Contact Plating :

Tin

Height :

1.651mm

ECCN Code :

EAR99

Pbfree Code :

yes

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

1.5W

REACH SVHC :

No SVHC

Pin Count :

4

Case Connection :

COLLECTOR

Power Dissipation :

1.5W

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Base Part Number :

BCP53

Collector Emitter Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes