BCP53-16T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

Height :

1.57mm

Polarity/Channel Type :

PNP

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Emitter Base Voltage (VEBO) :

5V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Current Rating :

-1.5A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

1.5W

Collector Emitter Saturation Voltage :

-500mV

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

100V

Number of Terminations :

4

Terminal Form :

Gull wing

Base Part Number :

BCP53

Length :

6.5mm

Number of Elements :

1

Max Power Dissipation :

1.5W

Surface Mount :

yes

Radiation Hardening :

No

Pin Count :

4

Number of Pins :

4

Frequency :

50MHz

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2008

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Width :

3.5mm

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Voltage - Rated DC :

-80V

Max Breakdown Voltage :

80V

Gain Bandwidth Product :

50MHz

Element Configuration :

Single

ECCN Code :

EAR99

Max Collector Current :

1.5A

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Transition Frequency :

50MHz

hFE Min :

25

Collector Emitter Voltage (VCEO) :

80V

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-261-4, TO-261AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)