BCP53-16
- Mfr.Part #
- BCP53-16
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223
- Stock
- 2,296
- In Stock :
- 2,296
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 1.6W
- Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 50MHz
- Number of Pins :
- 4
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -500mV
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BCP53
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 80V
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Cut Tape (CT)
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Power Dissipation :
- 1.6W
- hFE Min :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Radiation Hardening :
- No
- Pin Count :
- 4
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Datasheets
- BCP53-16

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BCP53-16 Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCP53-16 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
BCP53-16 Applications
There are a lot of STMicroelectronics
BCP53-16 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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