BCP53-10T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Dual

Number of Elements :

1

Surface Mount :

yes

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Length :

6.7mm

Transition Frequency :

50MHz

Element Configuration :

Single

Height :

1.75mm

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

50MHz

Max Collector Current :

1.5A

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-500mV

Gain Bandwidth Product :

50MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Polarity/Channel Type :

PNP

Max Power Dissipation :

1.5W

Base Part Number :

BCP53

Published :

2003

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

-80V

Transistor Element Material :

SILICON

Transistor Type :

PNP

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

hFE Min :

25

Current Rating :

-1.5A

Power Dissipation :

1.5W

Collector Base Voltage (VCBO) :

100V

Packaging :

Tape and Reel (TR)

Width :

3.7mm

Package / Case :

TO-261-4, TO-261AA

Voltage - Rated DC :

-80V

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Number of Pins :

4

Radiation Hardening :

No

Number of Terminations :

4

Terminal Form :

Gull wing