BCP53-10T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Frequency :

50MHz

Transistor Type :

PNP

Height :

1.75mm

hFE Min :

25

Terminal Form :

Gull wing

Voltage - Rated DC :

-80V

Current Rating :

-1.5A

Factory Lead Time :

8 Weeks

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Published :

2003

Pin Count :

4

Collector Emitter Breakdown Voltage :

-80V

REACH SVHC :

No SVHC

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

-500mV

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Width :

3.7mm

Polarity/Channel Type :

PNP

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Power Dissipation :

1.5W

Max Collector Current :

1.5A

Mounting Type :

Surface Mount

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Temperature :

-65°C~150°C TJ

Element Configuration :

Single

Base Part Number :

BCP53

Number of Terminations :

4

Transistor Element Material :

SILICON

Max Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Lead Free :

Lead Free

Number of Elements :

1

Package / Case :

TO-261-4, TO-261AA

Transition Frequency :

50MHz

ECCN Code :

EAR99

Max Power Dissipation :

1.5W

Length :

6.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

100V

Case Connection :

COLLECTOR

Gain Bandwidth Product :

50MHz

Number of Pins :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V