BCP5216TA
- Mfr.Part #
- BCP5216TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223-3
- Stock
- 266,746
- In Stock :
- 266,746
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Length :
- 6.55mm
- Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Weight :
- 7.994566mg
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- -500mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Additional Feature :
- High Reliability
- Number of Pins :
- 4
- Factory Lead Time :
- 15 Weeks
- Height :
- 1.65mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BCP52
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 2W
- Width :
- 3.55mm
- Max Collector Current :
- 1A
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 125MHz
- Mounting Type :
- Surface Mount
- Published :
- 2013
- ECCN Code :
- EAR99
- Datasheets
- BCP5216TA

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5216TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BCP5216TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5216TA Applications
There are a lot of Diodes Incorporated
BCP5216TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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