BCP52-16,115
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- Mfr.Part #
- BCP52-16,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223
- Stock
- 11,959
- In Stock ：
- 11,959
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-G4
- Collector Base Voltage (VCBO) :
- -60V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Surface Mount :
- yes
- Ambient Temperature Range High :
- 150°C
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- -1A
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Power Dissipation :
- 650μW
- Factory Lead Time :
- 4 Weeks
- hFE Min :
- 63
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- -500mV
- Transition Frequency :
- 115MHz
- Transistor Type :
- PNP
- Max Junction Temperature (Tj) :
- 150°C
- Power - Max :
- 1W
- Base Part Number :
- BCP52
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 145MHz
- Transistor Element Material :
- SILICON
- Height :
- 1.8mm
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- -60V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Datasheets
- BCP52-16,115
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP52-16,115 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 115MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as -1A volts at Single BJT transistors maximum.
BCP52-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 115MHz
BCP52-16,115 Applications
There are a lot of Nexperia USA Inc.
BCP52-16,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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