BCP52-10,135
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- Mfr.Part #
- BCP52-10,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223
- Stock
- 28,517
- In Stock ：
- 28,517
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Published :
- 2013
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Number of Pins :
- 73
- Transition Frequency :
- 145MHz
- Base Part Number :
- BCP52
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 145MHz
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PDSO-G4
- Max Power Dissipation :
- 1.3W
- Power - Max :
- 1.3W
- Transistor Element Material :
- SILICON
- hFE Min :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Pin Count :
- 4
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.35W
- Frequency :
- 145MHz
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Max Collector Current :
- 1A
- Datasheets
- BCP52-10,135
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP52-10,135 Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 145MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
BCP52-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP52-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP52-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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