BCM856DS,115
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- Mfr.Part #
- BCM856DS,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS 2PNP 65V 0.1A 6TSOP
- Stock
- 18,245
- In Stock ：
- 18,245
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 65V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 380mW
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 80V
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 175MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Dual
- Published :
- 2008
- Number of Terminations :
- 6
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Type :
- 2 PNP (Dual) Matched Pair
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- SC-74, SOT-457
- Number of Elements :
- 2
- Pin Count :
- 6
- Max Power Dissipation :
- 380mW
- Base Part Number :
- BCM856
- Collector Emitter Voltage (VCEO) :
- 65V
- JESD-609 Code :
- e3
- Polarity :
- PNP
- Number of Pins :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 175MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -200mV
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 65V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 175MHz
- Transistor Application :
- AMPLIFIER
- Datasheets
- BCM856DS,115
BCM856DS,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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