BC817K40E6433HTMA1
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- Mfr.Part #
- BC817K40E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23
- Stock
- 94,282
- In Stock ：
- 94,282
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Transition Frequency :
- 170MHz
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Base Part Number :
- BC817
- Published :
- 2001
- Power Dissipation :
- 500mW
- Frequency :
- 170MHz
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- Datasheets
- BC817K40E6433HTMA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817K40E6433HTMA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 170MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 500mA volts.
BC817K40E6433HTMA1 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K40E6433HTMA1 Applications
There are a lot of Infineon Technologies
BC817K40E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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