BC817K16E6327HTSA1
- Mfr.Part #
- BC817K16E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23
- Stock
- 17,871
- In Stock :
- 17,871
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 700mV
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 900μm
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Terminations :
- 3
- Width :
- 1.3mm
- Transition Frequency :
- 170MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- BC817
- Halogen Free :
- Not Halogen Free
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 500mA
- Frequency :
- 170MHz
- Number of Pins :
- 3
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Length :
- 2.9mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC817K16E6327HTSA1

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817K16E6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 170MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817K16E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K16E6327HTSA1 Applications
There are a lot of Infineon Technologies
BC817K16E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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