BC817,235
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- Mfr.Part #
- BC817,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR NPN 500MA 45V SOT23
- Stock
- 1,706,896
- In Stock ：
- 1,706,896
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Collector Current :
- 500mA
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Current :
- 5A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- BC817
- Collector Emitter Voltage (VCEO) :
- 45V
- Power Dissipation :
- 250mW
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Max Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Datasheets
- BC817,235
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817,235 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817,235 Applications
There are a lot of Nexperia USA Inc.
BC817,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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