BC817-16LT3G
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- Mfr.Part #
- BC817-16LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 17,062
- In Stock ：
- 17,062
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 700mV
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2008
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Max Collector Current :
- 500mA
- Halogen Free :
- Halogen Free
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Power Dissipation :
- 300mW
- hFE Min :
- 100
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Surface Mount :
- yes
- Base Part Number :
- BC817
- Number of Pins :
- 3
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Datasheets
- BC817-16LT3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-16LT3G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
BC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-16LT3G Applications
There are a lot of ON Semiconductor
BC817-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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