BC817-16LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Power Dissipation :

300mW

Element Configuration :

Single

Number of Pins :

3

Terminal Position :

Dual

Voltage - Rated DC :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Contact Plating :

Tin

Operating Temperature :

-65°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

50V

Collector Emitter Saturation Voltage :

700mV

Packaging :

Cut Tape (CT)

Height :

940μm

Width :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

100MHz

Lead Free :

Lead Free

Current Rating :

500mA

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Published :

2002

Surface Mount :

yes

Collector Emitter Voltage (VCEO) :

45V

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Element Material :

SILICON

hFE Min :

100

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Base Part Number :

BC817

Length :

2.9mm

Max Breakdown Voltage :

45V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

45V

Transition Frequency :

100MHz

Frequency :

100MHz

Radiation Hardening :

No

Max Power Dissipation :

300mW

Halogen Free :

Halogen Free

Pin Count :

3

Max Collector Current :

500mA

Factory Lead Time :

4 Weeks

Output Voltage :

15V