BC817-16-7
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- Mfr.Part #
- BC817-16-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 17,535
- In Stock ：
- 17,535
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC817
- Power Dissipation :
- 350mW
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Height :
- 1mm
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 19 Weeks
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Radiation Hardening :
- No
- Max Power Dissipation :
- 310mW
- Number of Pins :
- 3
- Additional Feature :
- High Reliability
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Length :
- 3.05mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.4mm
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector (Ic) (Max) :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 800mA
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Series :
- Automotive, AEC-Q101
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BC817-16-7
NPN -65°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-16-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC817-16-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-16-7-F Applications
There are a lot of Diodes Incorporated
BC817-16-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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