BC80840MTF
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- Mfr.Part #
- BC80840MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.8A SOT23-3
- Stock
- 56,581
- In Stock ：
- 56,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 310mW
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Weight :
- 30mg
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 100
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 25V
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -700mV
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 25V
- Power Dissipation :
- 310mW
- Length :
- 2.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 970μm
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- Published :
- 2002
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 25V
- Base Part Number :
- BC808
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- -30V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 800mA
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Width :
- 1.3mm
- Datasheets
- BC80840MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80840MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80840MTF Applications
There are a lot of ON Semiconductor
BC80840MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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