BC808-25LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Transition Frequency :

100MHz

hFE Min :

160

Factory Lead Time :

2 Weeks

Emitter Base Voltage (VEBO) :

5V

Frequency :

100MHz

Width :

2.64mm

Collector Emitter Breakdown Voltage :

25V

Terminal Position :

Dual

Halogen Free :

Halogen Free

Length :

3.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

-700mV

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

25V

Max Breakdown Voltage :

25V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2007

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Max Power Dissipation :

225mW

Base Part Number :

BC808

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Number of Terminations :

3

Collector Base Voltage (VCBO) :

30V

Max Collector Current :

500mA

Element Configuration :

Single

Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

3

Number of Pins :

3

Transistor Element Material :

SILICON

Gain Bandwidth Product :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Radiation Hardening :

No

Height :

1.11mm

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)