BC80725MTF
- Mfr.Part #
- BC80725MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 21,417
- In Stock :
- 21,417
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 100
- Collector Emitter Saturation Voltage :
- -700mV
- Pbfree Code :
- yes
- Max Collector Current :
- 800mA
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 310mW
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Current :
- 8A
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- -50V
- Height :
- 960μm
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 310mW
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Length :
- 2.9mm
- Max Breakdown Voltage :
- 45V
- Weight :
- 59.987591mg
- Published :
- 2002
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC807
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Datasheets
- BC80725MTF

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80725MTF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC80725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC80725MTF Applications
There are a lot of ON Semiconductor
BC80725MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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