BC80716MTF
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- Mfr.Part #
- BC80716MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock ：
- 3,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Height :
- 970μm
- Current - Collector Cutoff (Max) :
- 100nA
- Published :
- 2002
- hFE Min :
- 100
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Weight :
- 30mg
- Emitter Base Voltage (VEBO) :
- -5V
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- -700mV
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 310mW
- Width :
- 1.3mm
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- -50V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Length :
- 2.9mm
- Element Configuration :
- Single
- Frequency :
- 100MHz
- Max Power Dissipation :
- 310mW
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Base Part Number :
- BC807
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 800mA
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC80716MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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