BC80716MTF
- Mfr.Part #
- BC80716MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 3,438
- In Stock :
- 3,438
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- hFE Min :
- 100
- Collector Emitter Saturation Voltage :
- -700mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 970μm
- Transition Frequency :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Width :
- 1.3mm
- Base Part Number :
- BC807
- Number of Elements :
- 1
- Weight :
- 30mg
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Max Power Dissipation :
- 310mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Max Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 800mA
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Power Dissipation :
- 310mW
- Length :
- 2.9mm
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Published :
- 2002
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- -50V
- Emitter Base Voltage (VEBO) :
- -5V
- Pbfree Code :
- yes
- Datasheets
- BC80716MTF

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor
BC80716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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