BC807-40LT1
- Mfr.Part #
- BC807-40LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 500MA SOT23
- Stock
- 21,000
- In Stock :
- 21,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Saturation Voltage :
- -700mV
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Height :
- 940μm
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 100MHz
- Contact Plating :
- Tin
- Length :
- 2.9mm
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- BC807
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.3mm
- Max Collector Current :
- 500mA
- Halogen Free :
- Halogen Free
- Published :
- 2007
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Packaging :
- Cut Tape (CT)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 250
- Datasheets
- BC807-40LT1

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC807-40LT1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
BC807-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-40LT1G Applications
There are a lot of ON Semiconductor
BC807-40LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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