BC807-25WT1G
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- Mfr.Part #
- BC807-25WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SC70-3
- Stock
- 18,426
- In Stock ：
- 18,426
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 460mW
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -700mV
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- BC807
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Surface Mount :
- yes
- Height :
- 900μm
- Pin Count :
- 3
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Published :
- 2011
- Halogen Free :
- Halogen Free
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 45V
- Width :
- 1.35mm
- Contact Plating :
- Tin
- Length :
- 2.2mm
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Max Power Dissipation :
- 460mW
- Datasheets
- BC807-25WT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC807-25WT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is -700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC807-25WT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25WT1G Applications
There are a lot of ON Semiconductor
BC807-25WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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