BC807-25LT1
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- Mfr.Part #
- BC807-25LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 500MA SOT23
- Stock
- 15,975
- In Stock ：
- 15,975
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 45V
- Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 940μm
- Base Part Number :
- BC807
- Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Halogen Free :
- Halogen Free
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Published :
- 2002
- Type :
- GENERAL PURPOSE
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Length :
- 2.9mm
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Saturation Voltage :
- -700mV
- Transistor Type :
- PNP
- Max Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 500mA
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- hFE Min :
- 160
- Width :
- 1.3mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BC807-25LT1
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC807-25LT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC807-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25LT1G Applications
There are a lot of ON Semiconductor
BC807-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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