BC807-16LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

SWITCHING

Max Power Dissipation :

225mW

Collector Emitter Breakdown Voltage :

45V

Gain Bandwidth Product :

100MHz

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Voltage (VCEO) :

45V

hFE Min :

100

Collector Emitter Saturation Voltage :

-700mV

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

2001

Collector Base Voltage (VCBO) :

50V

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Lead Free :

Lead Free

Transistor Type :

PNP

Height :

1.11mm

Surface Mount :

yes

JESD-609 Code :

e3

Power Dissipation :

300mW

Polarity/Channel Type :

PNP

Pin Count :

3

Base Part Number :

BC807

Max Breakdown Voltage :

45V

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Max Collector Current :

500mA

Factory Lead Time :

10 Weeks

Number of Terminations :

3

Length :

3.04mm

Width :

2.64mm

Terminal Position :

Dual

Transition Frequency :

100MHz

Element Configuration :

Single

Frequency :

100MHz