BC807-16LT1G
- Mfr.Part #
- BC807-16LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 19,607
- In Stock :
- 19,607
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Base Part Number :
- BC807
- Height :
- 940μm
- Length :
- 2.9mm
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Halogen Free :
- Halogen Free
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- hFE Min :
- 100
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Type :
- GENERAL PURPOSE
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Width :
- 1.3mm
- Transition Frequency :
- 100MHz
- Published :
- 2007
- Collector Emitter Saturation Voltage :
- -700mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BC807-16LT1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC807-16LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC807-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-16LT1G Applications
There are a lot of ON Semiconductor
BC807-16LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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