BC807-16LT1
- Mfr.Part #
- BC807-16LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 500MA SOT-23
- Stock
- 2,075
- In Stock :
- 2,075
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Pin Count :
- 3
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BC807
- Length :
- 2.9mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -700mV
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 100
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Published :
- 2007
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Width :
- 1.3mm
- Power Dissipation :
- 300mW
- Type :
- GENERAL PURPOSE
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Max Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Height :
- 940μm
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Datasheets
- BC807-16LT1

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC807-16LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC807-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-16LT1G Applications
There are a lot of ON Semiconductor
BC807-16LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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