BC69PASX
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- Mfr.Part #
- BC69PASX
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- NOW NEXPERIA BC69PASX - SMALL SI
- Stock
- 20,115
- In Stock ：
- 20,115
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 600mV
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 420mW
- Mount :
- Surface Mount
- Published :
- 2015
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Number of Elements :
- 1
- Power - Max :
- 420mW
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Package / Case :
- 3-UDFN Exposed Pad
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Cut Tape (CT)
- Frequency - Transition :
- 140MHz
- Contact Plating :
- Tin
- Transition Frequency :
- 140MHz
- JESD-30 Code :
- S-PDSO-N3
- Terminal Form :
- NO LEAD
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reference Standard :
- AEC-Q101; IEC-60134
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 32V
- Pin Count :
- 3
- Datasheets
- BC69PASX
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Cut Tape (CT) Surface Mount
BC69PASX Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 140MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
BC69PASX Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
BC69PASX Applications
There are a lot of Nexperia USA Inc.
BC69PASX applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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