BC618RL1
- Mfr.Part #
- BC618RL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 55V 1A TO92
- Stock
- 18,504
- In Stock :
- 18,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 55V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Additional Feature :
- EUROPEAN PART NUMBER
- Vce Saturation (Max) @ Ib, Ic :
- 1.1V @ 200μA, 200mA
- Frequency - Transition :
- 150MHz
- JESD-609 Code :
- e0
- Polarity :
- NPN
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 1.1V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Transistor Type :
- NPN - Darlington
- Mount :
- Through Hole
- Power Rating :
- 300mW
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- BC618
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 200mA 5V
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 3
- Current Rating :
- 1A
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- 55V
- Emitter Base Voltage (VEBO) :
- 12V
- Published :
- 2006
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- 240
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50nA
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 1A
- HTS Code :
- 8541.21.00.75
- Number of Elements :
- 1
- Datasheets
- BC618RL1

NPN - Darlington -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC618RL1 Overview
In this device, the DC current gain is 10000 @ 200mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 200μA, 200mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BC618RL1 Features
the DC current gain for this device is 10000 @ 200mA 5V
the vce saturation(Max) is 1.1V @ 200μA, 200mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 150MHz
BC618RL1 Applications
There are a lot of ON Semiconductor
BC618RL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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