BC56-16PA,115
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- Mfr.Part #
- BC56-16PA,115
- Manufacturer
- Nexperia
- Package / Case
- 3-PowerUDFN
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A 3HUSON
- Stock
- 8,450
- In Stock ：
- 8,450
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Power - Max :
- 420mW
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Frequency :
- 180MHz
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 3-PowerUDFN
- Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 1.65W
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transition Frequency :
- 180MHz
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 420mW
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2011
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Datasheets
- BC56-16PA,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-PowerUDFN Tape & Reel (TR) Surface Mount
BC56-16PA,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 180MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
BC56-16PA,115 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BC56-16PA,115 Applications
There are a lot of Nexperia USA Inc.
BC56-16PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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