BC559C
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- Mfr.Part #
- BC559C
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92
- Stock
- 24,000
- In Stock ：
- 24,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- PNP
- hFE Min :
- 110
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -100mA
- Gain Bandwidth Product :
- 150MHz
- Height :
- 5.33mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Packaging :
- Tape and Box (TB)
- Frequency :
- 150MHz
- Width :
- 4.19mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Base Part Number :
- BC559
- Number of Pins :
- 3
- Published :
- 2007
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Weight :
- 240mg
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Position :
- BOTTOM
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Voltage - Rated DC :
- -30V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Additional Feature :
- LOW NOISE
- Factory Lead Time :
- 6 Weeks
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -250mV
- Power Dissipation :
- 500mW
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Length :
- 5.2mm
- Datasheets
- BC559C
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC559CTA Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559CTA Applications
There are a lot of ON Semiconductor
BC559CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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