BC559C,116
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- Mfr.Part #
- BC559C,116
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 5,362
- In Stock ：
- 5,362
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 500mW
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Application :
- SWITCHING
- VCEsat-Max :
- 0.65 V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 100mA
- Polarity/Channel Type :
- PNP
- Frequency - Transition :
- 100MHz
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC559
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Surface Mount :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- JESD-30 Code :
- O-PBCY-T3
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- HTS Code :
- 8541.21.00.95
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Datasheets
- BC559C,116
,TO-226_straightlead.jpg)
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC559C,116 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The part has a transition frequency of 100MHz.Device displays Collector Emitter Breakdown (30V maximal voltage).
BC559C,116 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC559C,116 Applications
There are a lot of NXP USA Inc.
BC559C,116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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