BC559BTA
- Mfr.Part #
- BC559BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 141,701
- In Stock :
- 141,701
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- PNP
- Weight :
- 240mg
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- -5V
- Voltage - Rated DC :
- -30V
- Number of Elements :
- 1
- Base Part Number :
- BC559
- hFE Min :
- 110
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 30V
- Factory Lead Time :
- 7 Weeks
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.19mm
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 500mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2007
- Frequency :
- 150MHz
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- -30V
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 5.33mm
- Additional Feature :
- LOW NOISE
- Length :
- 5.2mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Contact Plating :
- Tin
- Current Rating :
- -100mA
- Collector Emitter Saturation Voltage :
- -250mV
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Mount :
- Through Hole
- Datasheets
- BC559BTA

PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC559BTA Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC559BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC559BTA Applications
There are a lot of ON Semiconductor
BC559BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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