BC558BTA
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- Mfr.Part #
- BC558BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR,
- Stock
- 10,100
- In Stock ：
- 10,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 7 Weeks
- Lead Free :
- Lead Free
- Height :
- 5.33mm
- Length :
- 5.2mm
- Gain Bandwidth Product :
- 150MHz
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- -250mV
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 150MHz
- Mount :
- Through Hole
- Current Rating :
- -100mA
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Pbfree Code :
- yes
- Max Power Dissipation :
- 500mW
- Power Dissipation :
- 500mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Width :
- 4.19mm
- Transistor Application :
- SWITCHING
- Published :
- 2007
- Voltage - Rated DC :
- -30V
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Base Part Number :
- BC558
- Transition Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- hFE Min :
- 110
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -30V
- Packaging :
- Tape and Box (TB)
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 240mg
- Datasheets
- BC558BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BTA Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor
BC558BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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