BC558BTA
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- Mfr.Part #
- BC558BTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.1A TO92-3
- Stock
- 10,100
- In Stock ：
- 10,100
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -250mV
- Max Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Height :
- 5.33mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Current Rating :
- -100mA
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 500mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 110
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Length :
- 5.2mm
- ECCN Code :
- EAR99
- Published :
- 2007
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Frequency :
- 150MHz
- Width :
- 4.19mm
- REACH SVHC :
- No SVHC
- Weight :
- 240mg
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- -30V
- Number of Terminations :
- 3
- Transition Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- -30V
- Factory Lead Time :
- 7 Weeks
- Power Dissipation :
- 500mW
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Base Part Number :
- BC558
- Datasheets
- BC558BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC558BTA Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC558BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC558BTA Applications
There are a lot of ON Semiconductor
BC558BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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