BC557BTA
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- Mfr.Part #
- BC557BTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO92-3
- Stock
- 5,386
- In Stock ：
- 5,386
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC557
- Collector Emitter Saturation Voltage :
- -250mV
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Width :
- 3.86mm
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 240mg
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -45V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 150MHz
- hFE Min :
- 110
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Published :
- 2007
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Height :
- 4.58mm
- Gain Bandwidth Product :
- 150MHz
- Current Rating :
- -100mA
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- -50V
- Frequency :
- 150MHz
- Length :
- 4.58mm
- Datasheets
- BC557BTA
PNP 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC557BTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC557BTA Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
BC557BTA Applications
There are a lot of ON Semiconductor
BC557BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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