BC556BZL1
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- Mfr.Part #
- BC556BZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A TO92
- Stock
- 20,236
- In Stock ：
- 20,236
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- -100mA
- Transition Frequency :
- 280MHz
- hFE Min :
- 180
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 650mV
- Collector Base Voltage (VCBO) :
- -80V
- Gain Bandwidth Product :
- 280MHz
- Peak Reflow Temperature (Cel) :
- 235
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 65V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 625mW
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Saturation Voltage :
- -300mV
- Transistor Type :
- PNP
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Voltage - Rated DC :
- -65V
- Polarity/Channel Type :
- PNP
- Published :
- 2002
- Terminal Position :
- BOTTOM
- Base Part Number :
- BC556
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Power Dissipation :
- 625mW
- Additional Feature :
- EUROPEAN PART NUMBER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 280MHz
- Element Configuration :
- Single
- Datasheets
- BC556BZL1
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC556BZL1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 280MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BC556BZL1 Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 280MHz
BC556BZL1 Applications
There are a lot of ON Semiconductor
BC556BZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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